Manufacturer: |
STMicroelectronics |
Product Category: | MOSFET |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-247-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
650 V |
Id – Continuous Drain Current: |
54 A |
Rds On – Drain-Source Resistance: |
45 mOhms |
Vgs – Gate-Source Voltage: |
– 30 V, + 30 V |
Vgs th – Gate-Source Threshold Voltage: |
4.2 V |
Qg – Gate Charge: |
80 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd – Power Dissipation: |
312 W |
Channel Mode: |
Enhancement |
Series: |
MDmesh M9 |
Packaging: |
Tube |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 4 ns |
Product Type: | MOSFET |
Rise Time: | 26 ns |
Factory Pack Quantity: | 30 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 77 ns |
Typical Turn-On Delay Time: | 25 ns |
Unit Weight: | 0.215171 oz |
STWA65N045M9
Product Properties
Manufacturer: |
STMicroelectronics |
Package / Case: |
TO-247-3 |
Number of Channels: |
1 Channel |
Series: |
MDmesh M9 |
Product Type: | MOSFET |
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