Manufacturer: |
STMicroelectronics |
Product Category: | MOSFET |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
H2PAK-2 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
600 V |
Id – Continuous Drain Current: |
27 A |
Rds On – Drain-Source Resistance: |
99 mOhms |
Vgs – Gate-Source Voltage: |
– 30 V, + 30 V |
Vgs th – Gate-Source Threshold Voltage: |
4.5 V |
Qg – Gate Charge: |
44 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd – Power Dissipation: |
179 W |
Channel Mode: |
Enhancement |
Qualification: |
AEC-Q101 |
Series: |
MDmesh DM9 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Packaging: |
MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 5 ns |
Product Type: | MOSFET |
Rise Time: | 8 ns |
Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 58 ns |
Typical Turn-On Delay Time: | 18 ns |
Unit Weight: | 0.052558 oz |
STH60N099DM9-2AG
Product Properties
Manufacturer: |
STMicroelectronics |
Package / Case: |
H2PAK-2 |
Number of Channels: |
1 Channel |
Series: |
MDmesh DM9 |
Product Type: | MOSFET |
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