NVMJST1D4N06CLTXG

Product Properties

Manufacturer:	onsemi
Package / Case:	TCPAK57
Number of Channels:	1 Channel
Series:	NVMJST1D4N06CL
Product Type:	MOSFET

Category: ONSEMI

Manufacturer:	onsemi
Product Category:	MOSFET
Mounting Style:	SMD/SMT
Package / Case:	TCPAK57
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	60 V
Id – Continuous Drain Current:	198 A
Rds On – Drain-Source Resistance:	1.49 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	92.2 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	113 W
Channel Mode:	Enhancement
Series:	NVMJST1D4N06CL
Brand:	onsemi
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance – Min:	217 S
Product Type:	MOSFET
Rise Time:	25 ns
Factory Pack Quantity:	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	16 ns

More Information

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.

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NVMJST1D4N06CLTXG

More Information

Single N-Channel Power MOSFETs

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