|
Manufacturer: |
onsemi |
| Product Category: | MOSFET |
|
Technology: |
SiC |
|
Mounting Style: |
SMD/SMT |
|
Package / Case: |
TO-247-4 |
|
Transistor Polarity: |
N-Channel |
|
Number of Channels: |
1 Channel |
|
Vds – Drain-Source Breakdown Voltage: |
1.2 kV |
|
Id – Continuous Drain Current: |
151 A |
|
Rds On – Drain-Source Resistance: |
20 mOhms |
|
Vgs – Gate-Source Voltage: |
– 10 V, + 22 V |
|
Vgs th – Gate-Source Threshold Voltage: |
4.4 V |
|
Qg – Gate Charge: |
254 nC |
|
Minimum Operating Temperature: |
– 55 C |
|
Maximum Operating Temperature: |
+ 175 C |
|
Pd – Power Dissipation: |
682 W |
|
Channel Mode: |
Enhancement |
|
Tradename: |
EliteSiC |
|
Series: |
NTH4L013N120M3S |
| Brand: | onsemi |
| Configuration: | SIngle |
| Fall Time: | 10 ns |
| Forward Transconductance – Min: | 57 S |
| Product Type: | MOSFET |
| Rise Time: | 23 ns |
| Factory Pack Quantity: | 450 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 56 ns |
| Typical Turn-On Delay Time: | 22 ns |
NTH4L013N120M3S
Product Properties
|
Manufacturer: |
onsemi |
|
Package / Case: |
TO-247-4 |
|
Number of Channels: |
1 Channel |
|
Series: |
NTH4L013N120M3S |
| Product Type: | MOSFET |
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