Manufacturer: |
Texas Instruments |
Product Category: | MOSFET |
REACH – SVHC: | |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-220-3 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
60 V |
Id – Continuous Drain Current: |
169 A |
Rds On – Drain-Source Resistance: |
4.2 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: |
1.5 V |
Qg – Gate Charge: |
44 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 175 C |
Pd – Power Dissipation: |
250 W |
Channel Mode: |
Enhancement |
Tradename: |
NexFET |
Series: |
CSD18532KCS |
Packaging: |
Tube |
Brand: | Texas Instruments |
Configuration: | Single |
Fall Time: | 5.6 ns |
Forward Transconductance – Min: | 187 S |
Height: | 16.51 mm |
Length: | 10.67 mm |
Product Type: | MOSFET |
Rise Time: | 5.3 ns |
Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 24.2 ns |
Typical Turn-On Delay Time: | 7.8 ns |
Width: | 4.7 mm |
Unit Weight: | 0.068784 oz |
CSD18532KCS
Product Properties
Manufacturer: |
Texas Instruments |
Package / Case: |
TO-220-3 |
Number of Channels: |
1 Channel |
Series: |
CSD18532KCS |
Product Type: | MOSFET |
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