Manufacturer: |
NXP |
Product Category: | RF Bipolar Transistors |
Series: |
BFU730F |
Transistor Type: |
Bipolar Wideband |
Technology: |
SiGe |
Transistor Polarity: |
NPN |
Operating Frequency: |
55 GHz |
DC Collector/Base Gain hfe Min: |
205 |
Collector- Emitter Voltage VCEO Max: |
2.8 V |
Emitter- Base Voltage VEBO: |
1 V |
Continuous Collector Current: |
5 mA |
Maximum Operating Temperature: |
+ 150 C |
Configuration: |
Single |
Mounting Style: |
SMD/SMT |
Package / Case: |
SOT-343F-4 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Packaging: |
MouseReel |
Brand: | NXP Semiconductors |
Collector- Base Voltage VCBO: | 10 V |
DC Current Gain hFE Max: | 555 |
Height: | 0.75 mm |
Length: | 2.2 mm |
Maximum DC Collector Current: | 30 mA |
Pd – Power Dissipation: | 197 mW |
Product Type: | RF Bipolar Transistors |
Factory Pack Quantity: | 3000 |
Subcategory: | Transistors |
Type: | RF Silicon Germanium |
Width: | 1.35 mm |
Part # Aliases: | 934064614115 |
Unit Weight: | 0.000235 oz |
BFU730F,115
Product Properties
Manufacturer: |
NXP |
Series: |
BFU730F |
Package / Case: |
SOT-343F-4 |
Product Type: | RF Bipolar Transistors |
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