|
Manufacturer: |
NXP |
| Product Category: | RF Bipolar Transistors |
|
Series: |
BFU530 |
|
Transistor Type: |
Bipolar Wideband |
|
Technology: |
Si |
|
Transistor Polarity: |
NPN |
|
Operating Frequency: |
11 GHz |
|
DC Collector/Base Gain hfe Min: |
60 |
|
Collector- Emitter Voltage VCEO Max: |
12 V |
|
Emitter- Base Voltage VEBO: |
2 V |
|
Continuous Collector Current: |
40 mA |
|
Minimum Operating Temperature: |
– 40 C |
|
Maximum Operating Temperature: |
+ 150 C |
|
Configuration: |
Single |
|
Mounting Style: |
SMD/SMT |
|
Package / Case: |
SOT-143B-4 |
|
Packaging: |
Reel |
|
Packaging: |
Cut Tape |
| Brand: | NXP Semiconductors |
| Maximum DC Collector Current: | 65 mA |
| Output Power: | 10 dBm |
| Pd – Power Dissipation: | 450 mW |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: | 10000 |
| Subcategory: | Transistors |
| Part # Aliases: | 934067703235 |
| Unit Weight: | 0.000314 oz |
BFU530VL
Product Properties
|
Manufacturer: |
NXP |
|
Series: |
BFU530 |
|
Package / Case: |
SOT-143B-4 |
| Product Type: | RF Bipolar Transistors |
EN 
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