Manufacturer: |
NXP |
Product Category: | RF MOSFET Transistors |
Technology: |
GaN Si |
Id – Continuous Drain Current: |
12 mA |
Vds – Drain-Source Breakdown Voltage: |
125 V |
Operating Frequency: |
3.3 GHz to 4.3 GHz |
Gain: |
16.9 dB |
Output Power: |
24.5 dBm |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Mounting Style: |
SMD/SMT |
Package / Case: |
DFN-6 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Brand: | NXP Semiconductors |
Number of Channels: | 1 Channel |
Product Type: | RF MOSFET Transistors |
Series: | A5G35S004N |
Factory Pack Quantity: | 5000 |
Subcategory: | MOSFETs |
Type: | RF Power MOSFET |
Vgs – Gate-Source Voltage: | – 16 V |
Vgs th – Gate-Source Threshold Voltage: | – 2.5 V |
Part # Aliases: | 935417637528 |
A5G35S004NT6
Product Properties
Manufacturer: |
NXP |
Package / Case: |
DFN-6 |
Number of Channels: | 1 Channel |
Product Type: | RF MOSFET Transistors |
Series: | A5G35S004N |
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