|
Manufacturer: |
NXP |
| Product Category: | RF MOSFET Transistors |
|
Technology: |
GaN Si |
|
Vds – Drain-Source Breakdown Voltage: |
125 V |
|
Operating Frequency: |
3.3 GHz to 3.8 GHz |
|
Gain: |
14.1 dB |
|
Output Power: |
18 W |
|
Minimum Operating Temperature: |
– 55 C |
|
Maximum Operating Temperature: |
+ 150 C |
|
Mounting Style: |
SMD/SMT |
|
Package / Case: |
DFN-10 |
|
Packaging: |
Reel |
|
Packaging: |
Cut Tape |
| Brand: | NXP Semiconductors |
| Number of Channels: | 2 Channel |
| Product Type: | RF MOSFET Transistors |
| Series: | A5G35H120N |
| Factory Pack Quantity: | 2000 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs – Gate-Source Voltage: | – 16 V |
| Vgs th – Gate-Source Threshold Voltage: | – 2.4 V |
| Part # Aliases: | 935432729518 |
A5G35H120NT2
Product Properties
|
Manufacturer: |
NXP |
|
Package / Case: |
DFN-10 |
| Number of Channels: | 2 Channel |
| Product Type: | RF MOSFET Transistors |
| Series: | A5G35H120N |
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