Manufacturer: |
Texas Instruments |
Product Category: | MOSFET |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
WSON-FET-6 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
1 Channel |
Vds – Drain-Source Breakdown Voltage: |
100 V |
Id – Continuous Drain Current: |
14.4 A |
Rds On – Drain-Source Resistance: |
59 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: |
3.2 V |
Qg – Gate Charge: |
4.3 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd – Power Dissipation: |
2.5 W |
Channel Mode: |
Enhancement |
Tradename: |
NexFET |
Series: |
CSD19538Q2 |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Packaging: |
MouseReel |
Brand: | Texas Instruments |
Configuration: | Single |
Fall Time: | 2 ns |
Height: | 0.75 mm |
Length: | 2 mm |
Product Type: | MOSFET |
Rise Time: | 3 ns |
Factory Pack Quantity: | 250 |
Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 7 ns |
Typical Turn-On Delay Time: | 5 ns |
Width: | 2 mm |
Unit Weight: | 0.000208 oz |
CSD19538Q2T
Product Properties
Manufacturer: |
Texas Instruments |
Package / Case: |
WSON-FET-6 |
Number of Channels: |
1 Channel |
Series: |
CSD19538Q2 |
Product Type: | MOSFET |
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