|
Manufacturer: |
Texas Instruments |
| Product Category: | MOSFET |
| REACH – SVHC: | |
|
Technology: |
Si |
|
Mounting Style: |
SMD/SMT |
|
Package / Case: |
D2PAK-3 (TO-263-3) |
|
Transistor Polarity: |
N-Channel |
|
Number of Channels: |
1 Channel |
|
Vds – Drain-Source Breakdown Voltage: |
100 V |
|
Id – Continuous Drain Current: |
200 A |
|
Rds On – Drain-Source Resistance: |
5.6 mOhms |
|
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
|
Vgs th – Gate-Source Threshold Voltage: |
2.6 V |
|
Qg – Gate Charge: |
44 nC |
|
Minimum Operating Temperature: |
– 55 C |
|
Maximum Operating Temperature: |
+ 175 C |
|
Pd – Power Dissipation: |
250 W |
|
Channel Mode: |
Enhancement |
|
Tradename: |
NexFET |
|
Series: |
CSD19532KTT |
|
Packaging: |
Reel |
|
Packaging: |
Cut Tape |
|
Packaging: |
MouseReel |
| Brand: | Texas Instruments |
| Configuration: | Single |
| Fall Time: | 2 ns |
| Height: | 19.7 mm |
| Length: | 9.25 mm |
| Moisture Sensitive: | Yes |
| Product: | Power MOSFETs |
| Product Type: | MOSFET |
| Rise Time: | 3 ns |
| Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | N-Channel MOSFET |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Width: | 10.26 mm |
| Unit Weight: | 0.068643 oz |
CSD19532KTTT
Product Properties
|
Manufacturer: |
Texas Instruments |
|
Package / Case: |
D2PAK-3 (TO-263-3) |
|
Number of Channels: |
1 Channel |
|
Series: |
CSD19532KTT |
| Product: | Power MOSFETs |
| Product Type: | MOSFET |
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