Manufacturer: |
Texas Instruments |
Product Category: | MOSFET |
REACH – SVHC: | |
Technology: |
Si |
Mounting Style: |
SMD/SMT |
Package / Case: |
LSON-CLIP-8 |
Transistor Polarity: |
N-Channel |
Number of Channels: |
2 Channel |
Vds – Drain-Source Breakdown Voltage: |
25 V |
Id – Continuous Drain Current: |
4.5 A |
Rds On – Drain-Source Resistance: |
– |
Vgs – Gate-Source Voltage: |
– 5 V, + 5 V |
Vgs th – Gate-Source Threshold Voltage: |
2.1 V, 1.6 V |
Qg – Gate Charge: |
6.2 nC, 12 nC |
Minimum Operating Temperature: |
– 55 C |
Maximum Operating Temperature: |
+ 150 C |
Pd – Power Dissipation: |
6 W |
Channel Mode: |
Enhancement |
Tradename: |
NexFET |
Series: |
CSD86330Q3D |
Packaging: |
Reel |
Packaging: |
Cut Tape |
Packaging: |
MouseReel |
Brand: | Texas Instruments |
Configuration: | Dual |
Development Kit: | CSD86330EVM-717, TPS40322EVM-679 |
Fall Time: | 1.9 ns, 4.2 ns |
Forward Transconductance – Min: | 52 S, 82 S |
Height: | 1.5 mm |
Length: | 3.3 mm |
Product Type: | MOSFET |
Rise Time: | 7.5 ns, 6.3 ns |
Factory Pack Quantity: | 2500 |
Subcategory: | MOSFETs |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 8.5 ns, 15.8 ns |
Typical Turn-On Delay Time: | 4.9 ns, 5.3 ns |
Width: | 3.3 mm |
Unit Weight: | 0.002254 oz |
CSD86330Q3D
Product Properties
Manufacturer: |
Texas Instruments |
Package / Case: |
LSON-CLIP-8 |
Number of Channels: |
2 Channel |
Series: |
CSD86330Q3D |
Product Type: | MOSFET |
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