STL260N4LF7

Product Properties

Manufacturer:
 STMicroelectronics
Package / Case:
 PowerFLAT5x6-8
Number of Channels:
 1 Channel
Product Type: MOSFET

 

Category:
Manufacturer:
 STMicroelectronics
Product Category: MOSFET
Technology:
 Si
Mounting Style:
 SMD/SMT
Package / Case:
 PowerFLAT5x6-8
Transistor Polarity:
 N-Channel
Number of Channels:
 1 Channel
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 120 A
Rds On – Drain-Source Resistance:
 1.1 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2.5 V
Qg – Gate Charge:
 42 nC
Minimum Operating Temperature:
 – 55 C
Maximum Operating Temperature:
 + 175 C
Pd – Power Dissipation:
 188 W
Channel Mode:
 Enhancement
Packaging:
 Reel
Packaging:
 Cut Tape
Packaging:
 MouseReel
Brand: STMicroelectronics
Fall Time: 23 ns
Product Type: MOSFET
Rise Time: 14 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 74 ns
Typical Turn-On Delay Time: 21 ns
Unit Weight: 0.002681 oz

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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