MSC400SMA330B4

Üretici firma:	Microchip
Ürün Kategorisi:	MOSFET
Technology:	SiC
Montaj Stili:	Through Hole
Paket / Kasa:	TO-247-4
Transistor Polarity:	N-Channel
Kanal Sayısı:	1 Kanal
Vds – Drain-Source Breakdown Voltage:	3.3 kV
Id – Continuous Drain Current:	11 A
Rds On – Drain-Source Resistance:	400 mOhms
Vgs – Gate-Source Voltage:	– 10 V, + 23 V
Vgs th – Gate-Source Threshold Voltage:	2.97 V
Qg – Gate Charge:	37 nC
Minimum Çalışma Sıcaklığı:	– 55 C
Maksimum Çalışma Sıcaklığı:	+ 150 C
Pd – Power Dissipation:	131 W
Channel Mode:	Enhancement
Paketleme:	Tüp
Marka:	Microchip Technology
Configuration:	Single
Fall Time:	20 ns
Product:	MOSFETs
Ürün Tipi:	MOSFET
Rise Time:	8 ns
Fabrika Paket Miktarı:	30
Alt kategori:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	16 ns

Daha Fazla Bilgi

MSC400SMA330B4 N-Channel Power MOSFET

Microchip Technology MSC400SMA330B4 N-Channel Power MOSFET is a 3300V, 400mΩ SiC MOSFET in a TO-247-4L package with a source sense. This MOSFET delivers excellent performance, helping to maximize system efficiency and minimize system weight and size. The MSC400SMA330B4 MOSFET is a fast and reliable body diode with superior avalanche ruggedness and fast switching speeds. This power MOSFET offers low capacitances and low gate charge. The MSC400SMA330B4 MOSFET eliminates the need for an external freewheeling diode, enhancing overall system efficiency and simplifying implementation. This power MOSFET features a stable operation at high junction temperature (T_J(max)=150°C) and is RoHS compliant. Typical applications include smart grid transmission and distribution, induction heating and welding, H/EV powertrain and EV charger, power supply and distribution, and industrial motor drives.

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MSC400SMA330B4

Daha Fazla Bilgi

MSC400SMA330B4 N-Channel Power MOSFET

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