Tillverkare: |
onsemi |
Produktkategori: | MOSFET |
REACH – SVHC: | |
Teknologi: |
SiC |
Monteringstyp: |
Through Hole |
Paket / Fodral: |
TO-247-4 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
1 kanal |
Vds – Drain-Source Breakdown Voltage: |
650 V |
Id – Continuous Drain Current: |
47 A |
Rds On – Drain-Source Resistance: |
70 mOhms |
Vgs – Gate-Source Voltage: |
– 8 V, + 22 V |
Vgs th – Gate-Source Threshold Voltage: |
4.3 V |
Qg – Gate Charge: |
74 nC |
Lägsta driftstemperatur: |
– 55 C |
Maximal driftstemperatur: |
+ 175 C |
Pd – Power Dissipation: |
176 W |
Channel Mode: |
Enhancement |
Tradename: |
EliteSiC |
Serie: |
NVH4L060N065SC1 |
Förpackning: |
Rör |
Varumärke: | onsemi |
Configuration: | Single |
Fall Time: | 11 ns |
Forward Transconductance – Min: | 12 S |
Produkttyp: | MOSFET |
Rise Time: | 14 ns |
Fabriksförpackning Kvantitet: | 450 |
Underkategori: | MOSFETs |
Typical Turn-Off Delay Time: | 24 ns |
Typical Turn-On Delay Time: | 11 ns |
NVH4L060N065SC1
Produktens egenskaper
Tillverkare: |
onsemi |
Paket / Fodral: |
TO-247-4 |
Antal kanaler: |
1 kanal |
Serie: |
NVH4L060N065SC1 |
Produkttyp: | MOSFET |
Recensioner
Det finns inga recensioner än.