Tillverkare: |
onsemi |
Produktkategori: | MOSFET |
Teknologi: |
SiC |
Monteringstyp: |
SMD/SMT |
Paket / Fodral: |
TO-247-4 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
1 kanal |
Vds – Drain-Source Breakdown Voltage: |
1.2 kV |
Id – Continuous Drain Current: |
151 A |
Rds On – Drain-Source Resistance: |
20 mOhms |
Vgs – Gate-Source Voltage: |
– 10 V, + 22 V |
Vgs th – Gate-Source Threshold Voltage: |
4.4 V |
Qg – Gate Charge: |
254 nC |
Lägsta driftstemperatur: |
– 55 C |
Maximal driftstemperatur: |
+ 175 C |
Pd – Power Dissipation: |
682 W |
Channel Mode: |
Enhancement |
Tradename: |
EliteSiC |
Serie: |
NTH4L013N120M3S |
Varumärke: | onsemi |
Configuration: | SIngle |
Fall Time: | 10 ns |
Forward Transconductance – Min: | 57 S |
Produkttyp: | MOSFET |
Rise Time: | 23 ns |
Fabriksförpackning Kvantitet: | 450 |
Underkategori: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 56 ns |
Typical Turn-On Delay Time: | 22 ns |
NTH4L013N120M3S
Produktens egenskaper
Tillverkare: |
onsemi |
Paket / Fodral: |
TO-247-4 |
Antal kanaler: |
1 kanal |
Serie: |
NTH4L013N120M3S |
Produkttyp: | MOSFET |
Recensioner
Det finns inga recensioner än.