NDSH10120C-F155

Produktens egenskaper

Tillverkare:
 onsemi
Produkt:
 Schottky Diodes
Paket / Fodral:
 TO-247-2
Serie:
 NDSH10120C-F155
Produkttyp: Schottky Diodes & Rectifiers

 

Kategori:
Tillverkare:
 onsemi
Produktkategori: Schottky Diodes & Rectifiers
Produkt:
 Schottky Diodes
Monteringstyp:
 Through Hole
Paket / Fodral:
 TO-247-2
Configuration:
 Single
Teknologi:
 SiC
If – Forward Current:
 12 A
Vrrm – Repetitive Reverse Voltage:
 1.2 kV
Vf – Forward Voltage:
 1.75 V
Ifsm – Forward Surge Current:
 546 A
Ir – Reverse Current:
 200 uA
Lägsta driftstemperatur:
 – 55 C
Maximal driftstemperatur:
 + 175 C
Serie:
 NDSH10120C-F155
Tradename:
 EliteSiC
Förpackning:
 Rör
Varumärke: onsemi
Drifttemperaturens omfång: – 55 C to + 175 C
Pd – Power Dissipation: 94 W
Produkttyp: Schottky Diodes & Rectifiers
Fabriksförpackning Kvantitet: 450
Underkategori: Diodes & Rectifiers
Vr – Reverse Voltage: 1.2 kV

NDSH10120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH10120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

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sv_SESV
en_USEN arAR bg_BGBG cs_CZCS da_DKDA nl_NLNL etET fiFI fr_FRFR de_DEDE elEL hu_HUHU it_ITIT jaJA ko_KRKO nb_NONB pl_PLPL ru_RURU es_ARES tr_TRTR ukUK sv_SESV