Tillverkare: |
Texas instrument |
Produktkategori: | MOSFET |
REACH – SVHC: | |
Teknologi: |
Si |
Monteringstyp: |
Through Hole |
Paket / Fodral: |
TO-220-3 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
1 kanal |
Vds – Drain-Source Breakdown Voltage: |
60 V |
Id – Continuous Drain Current: |
169 A |
Rds On – Drain-Source Resistance: |
4.2 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: |
1.5 V |
Qg – Gate Charge: |
44 nC |
Lägsta driftstemperatur: |
– 55 C |
Maximal driftstemperatur: |
+ 175 C |
Pd – Power Dissipation: |
250 W |
Channel Mode: |
Enhancement |
Tradename: |
NexFET |
Serie: |
CSD18532KCS |
Förpackning: |
Rör |
Varumärke: | Texas instrument |
Configuration: | Single |
Fall Time: | 5.6 ns |
Forward Transconductance – Min: | 187 S |
Höjd: | 16.51 mm |
Längd: | 10.67 mm |
Produkttyp: | MOSFET |
Rise Time: | 5.3 ns |
Fabriksförpackning Kvantitet: | 50 |
Underkategori: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 24.2 ns |
Typical Turn-On Delay Time: | 7.8 ns |
Bredd: | 4.7 mm |
Enhetens vikt: | 0.068784 oz |
CSD18532KCS
Produktens egenskaper
Tillverkare: |
Texas instrument |
Paket / Fodral: |
TO-220-3 |
Antal kanaler: |
1 kanal |
Serie: |
CSD18532KCS |
Produkttyp: | MOSFET |
Recensioner
Det finns inga recensioner än.