STL260N4LF7

Свойства продукта

Производитель:
 STMicroelectronics
Упаковка / футляр:
 PowerFLAT5x6-8
Количество каналов:
 1 канал
Тип продукта: MOSFET

 

Категория:
Производитель:
 STMicroelectronics
Категория продукта: MOSFET
Technology:
 Si
Стиль крепления:
 SMD/SMT
Упаковка / футляр:
 PowerFLAT5x6-8
Transistor Polarity:
 N-Channel
Количество каналов:
 1 канал
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 120 A
Rds On – Drain-Source Resistance:
 1.1 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2.5 V
Qg – Gate Charge:
 42 nC
Минимальная рабочая температура:
 – 55 C
Максимальная рабочая температура:
 + 175 C
Pd – Power Dissipation:
 188 W
Channel Mode:
 Enhancement
Упаковка:
 Катушка
Упаковка:
 Разрезанная лента
Упаковка:
 MouseReel
Бренд: STMicroelectronics
Fall Time: 23 ns
Тип продукта: MOSFET
Rise Time: 14 ns
Заводская упаковка Количество: 3000
Подкатегория: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 74 ns
Typical Turn-On Delay Time: 21 ns
Вес устройства: 0.002681 oz

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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