MSC080SMA120B

Свойства продукта

Производитель:
 Microchip
Упаковка / футляр:
 TO-247-3
Количество каналов:
 1 канал
Тип продукта: MOSFET

 

Категория:
Производитель:
 Microchip
Категория продукта: MOSFET
Technology:
 SiC
Стиль крепления:
 Through Hole
Упаковка / футляр:
 TO-247-3
Transistor Polarity:
 N-Channel
Количество каналов:
 1 канал
Vds – Drain-Source Breakdown Voltage:
 1.2 kV
Id – Continuous Drain Current:
 37 A
Rds On – Drain-Source Resistance:
 100 mOhms
Vgs – Gate-Source Voltage:
 – 10 V, + 23 V
Vgs th – Gate-Source Threshold Voltage:
 1.8 V
Qg – Gate Charge:
 64 nC
Минимальная рабочая температура:
 – 55 C
Максимальная рабочая температура:
 + 175 C
Pd – Power Dissipation:
 200 W
Channel Mode:
 Enhancement
Упаковка:
 Трубка
Бренд: Microchip Technology
Configuration: Single
Тип продукта: MOSFET
Заводская упаковка Количество: 30
Подкатегория: MOSFETs
Вес устройства: 0.211644 oz

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip’s next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, SiC MOSFET and SiC SBD die can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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