STL260N4LF7

Właściwości produktu

Producent:
 STMicroelectronics
Opakowanie / etui:
 PowerFLAT5x6-8
Liczba kanałów:
 1 Kanał
Typ produktu: MOSFET

 

Kategoria:
Producent:
 STMicroelectronics
Kategoria produktu: MOSFET
Technologia:
 Si
Styl montażu:
 SMD/SMT
Opakowanie / etui:
 PowerFLAT5x6-8
Transistor Polarity:
 N-Channel
Liczba kanałów:
 1 Kanał
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 120 A
Rds On – Drain-Source Resistance:
 1.1 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2.5 V
Qg – Gate Charge:
 42 nC
Minimalna temperatura pracy:
 – 55 C
Maksymalna temperatura pracy:
 + 175 C
Pd – Power Dissipation:
 188 W
Channel Mode:
 Enhancement
Opakowanie:
 Kołowrotek
Opakowanie:
 Taśma cięta
Opakowanie:
 MouseReel
Marka: STMicroelectronics
Fall Time: 23 ns
Typ produktu: MOSFET
Rise Time: 14 ns
Ilość w opakowaniu fabrycznym: 3000
Podkategoria: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 74 ns
Typical Turn-On Delay Time: 21 ns
Waga jednostki: 0.002681 oz

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

Opinie

Na razie nie ma opinii o produkcie.

Napisz pierwszą opinię o „STL260N4LF7”

Podobne produkty

Szybki podgląd

TDA75610S-48X

Szybki podgląd

LM239QT

Szybki podgląd

TS522IDT

Szybki podgląd

TL072BIDT

Szybki podgląd

MC3303PT

Szybki podgląd

TL084BCDT

Szybki podgląd

TDA2822D

Szybki podgląd

TL084AIDT

pl_PLPL
en_USEN arAR bg_BGBG cs_CZCS da_DKDA nl_NLNL etET fiFI fr_FRFR de_DEDE elEL hu_HUHU it_ITIT jaJA ko_KRKO nb_NONB ru_RURU es_ARES sv_SESV tr_TRTR ukUK pl_PLPL