MSC400SMA330B4

Producent:	Microchip
Kategoria produktu:	MOSFET
Technologia:	SiC
Styl montażu:	Przez otwór
Opakowanie / etui:	TO-247-4
Transistor Polarity:	N-Channel
Liczba kanałów:	1 Kanał
Vds – Drain-Source Breakdown Voltage:	3.3 kV
Id – Continuous Drain Current:	11 A
Rds On – Drain-Source Resistance:	400 mOhms
Vgs – Gate-Source Voltage:	– 10 V, + 23 V
Vgs th – Gate-Source Threshold Voltage:	2.97 V
Qg – Gate Charge:	37 nC
Minimalna temperatura pracy:	– 55 C
Maksymalna temperatura pracy:	+ 150 C
Pd – Power Dissipation:	131 W
Channel Mode:	Enhancement
Opakowanie:	Rura
Marka:	Microchip Technology
Configuration:	Single
Fall Time:	20 ns
Produkt:	MOSFETs
Typ produktu:	MOSFET
Rise Time:	8 ns
Ilość w opakowaniu fabrycznym:	30
Podkategoria:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	16 ns

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MSC400SMA330B4 N-Channel Power MOSFET

Microchip Technology MSC400SMA330B4 N-Channel Power MOSFET is a 3300V, 400mΩ SiC MOSFET in a TO-247-4L package with a source sense. This MOSFET delivers excellent performance, helping to maximize system efficiency and minimize system weight and size. The MSC400SMA330B4 MOSFET is a fast and reliable body diode with superior avalanche ruggedness and fast switching speeds. This power MOSFET offers low capacitances and low gate charge. The MSC400SMA330B4 MOSFET eliminates the need for an external freewheeling diode, enhancing overall system efficiency and simplifying implementation. This power MOSFET features a stable operation at high junction temperature (T_J(max)=150°C) and is RoHS compliant. Typical applications include smart grid transmission and distribution, induction heating and welding, H/EV powertrain and EV charger, power supply and distribution, and industrial motor drives.

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MSC400SMA330B4

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MSC400SMA330B4 N-Channel Power MOSFET

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