NVH4L060N065SC1

Producteigenschappen

Fabrikant:	onsemi
Verpakking/hoes:	TO-247-4
Aantal kanalen:	1 Kanaal
Serie:	NVH4L060N065SC1
Type product:	MOSFET

Categorie: ONSEMI

Fabrikant:	onsemi
Productcategorie:	MOSFET
REACH – SVHC:
Technology:	SiC
Montagestijl:	Door gat
Verpakking/hoes:	TO-247-4
Transistor Polarity:	N-Channel
Aantal kanalen:	1 Kanaal
Vds – Drain-Source Breakdown Voltage:	650 V
Id – Continuous Drain Current:	47 A
Rds On – Drain-Source Resistance:	70 mOhms
Vgs – Gate-Source Voltage:	– 8 V, + 22 V
Vgs th – Gate-Source Threshold Voltage:	4.3 V
Qg – Gate Charge:	74 nC
Minimale bedrijfstemperatuur:	– 55 C
Maximale bedrijfstemperatuur:	+ 175 C
Pd – Power Dissipation:	176 W
Channel Mode:	Enhancement
Handelsnaam:	EliteSiC
Serie:	NVH4L060N065SC1
Verpakking:	Buis
Merk:	onsemi
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance – Min:	12 S
Type product:	MOSFET
Rise Time:	14 ns
Hoeveelheid fabrieksverpakking:	450
Subcategorie:	MOSFETs
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns

Meer informatie

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L060N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

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NVH4L060N065SC1

Meer informatie

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

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