|
Fabrikant: |
onsemi |
| Productcategorie: | MOSFET |
|
Montagestijl: |
SMD/SMT |
|
Verpakking/hoes: |
SO-8 |
|
Transistor Polarity: |
N-Channel |
|
Aantal kanalen: |
1 Kanaal |
|
Vds – Drain-Source Breakdown Voltage: |
30 V |
|
Id – Continuous Drain Current: |
136 A |
|
Rds On – Drain-Source Resistance: |
1.7 mOhms |
|
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
|
Vgs th – Gate-Source Threshold Voltage: |
2.2 V |
|
Qg – Gate Charge: |
20.8 nC |
|
Minimale bedrijfstemperatuur: |
– 55 C |
|
Maximale bedrijfstemperatuur: |
+ 150 C |
|
Pd – Power Dissipation: |
64 W |
|
Channel Mode: |
Enhancement |
| Merk: | onsemi |
| Configuration: | SIngle |
| Fall Time: | 17 ns |
| Forward Transconductance – Min: | 136 S |
| Type product: | MOSFET |
| Rise Time: | 32 ns |
| Hoeveelheid fabrieksverpakking: | 1500 |
| Subcategorie: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 14 ns |
NTMFS4C324NT1G
Producteigenschappen
|
Fabrikant: |
onsemi |
|
Verpakking/hoes: |
SO-8 |
|
Aantal kanalen: |
1 Kanaal |
| Type product: | MOSFET |
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