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A5G35H120NT2

Producteigenschappen

Fabrikant:
 NXP
Verpakking/hoes:
 DFN-10
Aantal kanalen: 2 Kanaal
Type product: RF MOSFET Transistors
Serie: A5G35H120N

 

Categorie:
Fabrikant:
 NXP
Productcategorie: RF MOSFET Transistors
Technology:
 GaN Si
Vds – Drain-Source Breakdown Voltage:
 125 V
Operating Frequency:
 3.3 GHz to 3.8 GHz
Gain:
 14.1 dB
Output Power:
 18 W
Minimale bedrijfstemperatuur:
 – 55 C
Maximale bedrijfstemperatuur:
 + 150 C
Montagestijl:
 SMD/SMT
Verpakking/hoes:
 DFN-10
Verpakking:
 Haspel
Verpakking:
 Snijband
Merk: NXP-halfgeleiders
Aantal kanalen: 2 Kanaal
Type product: RF MOSFET Transistors
Serie: A5G35H120N
Hoeveelheid fabrieksverpakking: 2000
Subcategorie: MOSFETs
Type: RF Power MOSFET
Vgs – Gate-Source Voltage: – 16 V
Vgs th – Gate-Source Threshold Voltage: – 2.4 V
Deel # Aliassen: 935432729518

A5G35H120N Airfast RF Power GaN Transistor

NXP Semiconductors A5G35H120N Airfast RF Power GaN Transistor is an 18W asymmetrical Doherty RF power GaN transistor. It is designed for cellular base station applications requiring a very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700MHz.

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