NTP082N65S3HF

Produktegenskaper

Produsent:
 onsemi
Pakke/etui:
 TO-220-3
Antall kanaler:
 1 Kanal
Serie:
 NTP082N65S3HF
Produkttype: MOSFET

 

Kategori:
Produsent:
 onsemi
Produktkategori: MOSFET
REACH – SVHC:
Technology:
 Si
Monteringsstil:
 Gjennom hull
Pakke/etui:
 TO-220-3
Transistor Polarity:
 N-Channel
Antall kanaler:
 1 Kanal
Vds – Drain-Source Breakdown Voltage:
 650 V
Id – Continuous Drain Current:
 40 A
Rds On – Drain-Source Resistance:
 82 mOhms
Vgs – Gate-Source Voltage:
 – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage:
 5 V
Qg – Gate Charge:
 81 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 150 C
Pd – Power Dissipation:
 313 W
Channel Mode:
 Enhancement
Serie:
 NTP082N65S3HF
Emballasje:
 Rør
Merkevare: onsemi
Produkttype: MOSFET
Fabrikkpakke Antall: 800
Underkategori: MOSFETs

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

Omtaler

Det er ingen omtaler ennå.

Bli den første til å omtale “NTP082N65S3HF”

Relaterte produkter

Rask visning

NCS21911SN2T1G

Rask visning

NCS21872DMR2G

Rask visning

NCV20074DTBR2G

Rask visning

NCS213RSQT2G

Rask visning

NE521DR2G

Rask visning

FAN3852UC16X

Rask visning

LM2904DMR2G

Rask visning

NCV2904DMR2G

nb_NONB
en_USEN arAR bg_BGBG cs_CZCS da_DKDA nl_NLNL etET fiFI fr_FRFR de_DEDE elEL hu_HUHU it_ITIT jaJA ko_KRKO pl_PLPL ru_RURU es_ARES sv_SESV tr_TRTR ukUK nb_NONB