STL8N10F7

제조업체:	ST마이크로일렉트로닉스
제품 카테고리:	MOSFET
Technology:	Si
장착 스타일:	SMD/SMT
패키지 / 케이스:	PowerFLAT-3.3×3.3-8
Transistor Polarity:	N-Channel
채널 수:	1 채널
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	35 A
Rds On – Drain-Source Resistance:	17 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	25 nC
최소 작동 온도:	– 55C
최대 작동 온도:	+ 150 C
Pd – Power Dissipation:	50 W
Channel Mode:	Enhancement
Tradename:	STripFET
시리즈:	STL8N10F7
포장:	릴
포장:	테이프 자르기
포장:	MouseReel
브랜드:	ST마이크로일렉트로닉스
Configuration:	Single
Fall Time:	8 ns
제품 유형:	MOSFET
Rise Time:	17 ns
팩토리 팩 수량:	3000
하위 카테고리:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	15 ns
단위 무게:	0.000705 oz

자세한 정보

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STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

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STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST’s portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST’s 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST’s complete offering of MOSFETs and IGBTs for any power design.

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