SGT120R65AL

제조업체:	ST마이크로일렉트로닉스
제품 카테고리:	MOSFET
Technology:	GaN
장착 스타일:	SMD/SMT
패키지 / 케이스:	PowerFLAT-8
Transistor Polarity:	N-Channel
채널 수:	1 채널
Vds – Drain-Source Breakdown Voltage:	650 V
Id – Continuous Drain Current:	15 A
Rds On – Drain-Source Resistance:	120 mOhms
Vgs – Gate-Source Voltage:	– 10 V, + 6 V
Vgs th – Gate-Source Threshold Voltage:	2.6 V
Qg – Gate Charge:	3 nC
최소 작동 온도:	– 55C
최대 작동 온도:	+ 155 C
Pd – Power Dissipation:	192 W
Channel Mode:	Enhancement
포장:	릴
포장:	테이프 자르기
포장:	MouseReel
브랜드:	ST마이크로일렉트로닉스
Configuration:	Single
Fall Time:	9.7 ns
습기에 민감합니다:	예
제품 유형:	MOSFET
Rise Time:	6 ns
팩토리 팩 수량:	3000
하위 카테고리:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8.9 ns
Typical Turn-On Delay Time:	4.1 ns
단위 무게:	0.002681 oz

자세한 정보

SGT120R65AL 650V E-Mode PowerGaN Transistor

STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor offers 15A maximum current capability combined with well-established packaging technology and a Kelvin source connection for optimum gate driving. The resulting G-HEMT device provides extremely low conduction losses, high current capability, and ultra-fast switching operation to enable high power density and unbeatable efficiency. The SGT120R65AL is available n an industry-standard PowerFLAT 5×6 HV compact surface-mount package. Typical applications include PC adaptors, USB wall chargers, and wireless charging.

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

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SGT120R65AL

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SGT120R65AL 650V E-Mode PowerGaN Transistor

Standard Products

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