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NVH4L060N065SC1

Propriétés du produit

Fabricant :
 onsemi
Emballage / Caisse :
 TO-247-4
Nombre de canaux :
 1 Canal
Série :
 NVH4L060N065SC1
Type de produit : MOSFET

 

Catégorie :
Fabricant :
 onsemi
Catégorie de produit : MOSFET
REACH – SVHC:
Technology:
 SiC
Style de montage :
 À travers le trou
Emballage / Caisse :
 TO-247-4
Transistor Polarity:
 N-Channel
Nombre de canaux :
 1 Canal
Vds – Drain-Source Breakdown Voltage:
 650 V
Id – Continuous Drain Current:
 47 A
Rds On – Drain-Source Resistance:
 70 mOhms
Vgs – Gate-Source Voltage:
 – 8 V, + 22 V
Vgs th – Gate-Source Threshold Voltage:
 4.3 V
Qg – Gate Charge:
 74 nC
Température minimale de fonctionnement :
 – 55 C
Température de fonctionnement maximale :
 + 175 C
Pd – Power Dissipation:
 176 W
Channel Mode:
 Enhancement
Nom commercial :
 EliteSiC
Série :
 NVH4L060N065SC1
Emballage :
 Tube
Marque : onsemi
Configuration: Single
Fall Time: 11 ns
Forward Transconductance – Min: 12 S
Type de produit : MOSFET
Rise Time: 14 ns
Quantité d'emballage d'usine : 450
Sous-catégorie : MOSFETs
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 11 ns

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L060N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

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