STL8N10F7

Valmistaja:	STMicroelectronics
Tuotekategoria:	MOSFET
Technology:	Si
Asennustapa:	SMD/SMT
Pakkaus / kotelo:	PowerFLAT-3.3×3.3-8
Transistor Polarity:	N-Channel
Kanavien määrä:	1 kanava
Vds – Drain-Source Breakdown Voltage:	100 V
Id – Continuous Drain Current:	35 A
Rds On – Drain-Source Resistance:	17 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	25 nC
Pienin käyttölämpötila:	– 55 C
Suurin käyttölämpötila:	+ 150 C
Pd – Power Dissipation:	50 W
Channel Mode:	Enhancement
Kauppanimi:	STripFET
Sarja:	STL8N10F7
Pakkaus:	Kela
Pakkaus:	Leikkaa nauha
Pakkaus:	MouseReel
Tuotemerkki:	STMicroelectronics
Configuration:	Single
Fall Time:	8 ns
Tuotetyyppi:	MOSFET
Rise Time:	17 ns
Tehdaspakkauksen määrä:	3000
Alaluokka:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	15 ns
Yksikön paino:	0.000705 oz

Lisätietoja

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

Latest Technologies in Power MOSFET and IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST’s portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST’s 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST’s complete offering of MOSFETs and IGBTs for any power design.

STMicroelectronics STripFET VII Power MOSFETs

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