STL260N4LF7

Tuotteen ominaisuudet

Valmistaja:
 STMicroelectronics
Pakkaus / kotelo:
 PowerFLAT5x6-8
Kanavien määrä:
 1 kanava
Tuotetyyppi: MOSFET

 

Osasto:
Valmistaja:
 STMicroelectronics
Tuotekategoria: MOSFET
Technology:
 Si
Asennustapa:
 SMD/SMT
Pakkaus / kotelo:
 PowerFLAT5x6-8
Transistor Polarity:
 N-Channel
Kanavien määrä:
 1 kanava
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 120 A
Rds On – Drain-Source Resistance:
 1.1 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2.5 V
Qg – Gate Charge:
 42 nC
Pienin käyttölämpötila:
 – 55 C
Suurin käyttölämpötila:
 + 175 C
Pd – Power Dissipation:
 188 W
Channel Mode:
 Enhancement
Pakkaus:
 Kela
Pakkaus:
 Leikkaa nauha
Pakkaus:
 MouseReel
Tuotemerkki: STMicroelectronics
Fall Time: 23 ns
Tuotetyyppi: MOSFET
Rise Time: 14 ns
Tehdaspakkauksen määrä: 3000
Alaluokka: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 74 ns
Typical Turn-On Delay Time: 21 ns
Yksikön paino: 0.002681 oz

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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