NVMYS9D3N06CLTWG

Toote omadused

Tootja:
 onsemi
Pakend / ümbris:
 LFPAK-4
Kanalite arv:
 1 kanal
Seeria:
 NVMYS9D3N06CL
Toote tüüp: Toode: MOSFET

 

Kategooria:
Tootja:
 onsemi
Tootekategooria: MOSFET
Technology:
 Si
Paigaldamise stiil:
 SMD/SMT
Pakend / ümbris:
 LFPAK-4
Transistor Polarity:
 N-Channel
Kanalite arv:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 60 V
Id – Continuous Drain Current:
 50 A
Rds On – Drain-Source Resistance:
 9.2 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2 V
Qg – Gate Charge:
 9.5 nC
Minimaalne töötemperatuur:
 - 55 C
Maksimaalne töötemperatuur:
 + 175 C
Pd - Võimsuse hajumine:
 46 W
Channel Mode:
 Enhancement
Seeria:
 NVMYS9D3N06CL
Pakend:
 Reel
Pakend:
 Lõigatud lint
Brändi: onsemi
Konfiguratsioon: Single
Fall Time: 2 ns
Forward Transconductance – Min: 37 S
Toote tüüp: Toode: MOSFET
Rise Time: 25 ns
Tehase pakendi kogus: 3000
Alamkategooria: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 6 ns

NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low RDS(ON) to minimize conduction losses and low gate charge (QG) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

PowerTrench® MOSFETs

onsemi / Fairchild PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

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