NVH4L060N065SC1

Toote omadused

Tootja:	onsemi
Pakend / ümbris:	TO-247-4
Kanalite arv:	1 kanal
Seeria:	NVH4L060N065SC1
Toote tüüp: Toode:	MOSFET

Kategooria: ONSEMI

Tootja:	onsemi
Tootekategooria:	MOSFET
REACH – SVHC:
Technology:	SiC
Paigaldamise stiil:	Läbi augu
Pakend / ümbris:	TO-247-4
Transistor Polarity:	N-Channel
Kanalite arv:	1 kanal
Vds – Drain-Source Breakdown Voltage:	650 V
Id – Continuous Drain Current:	47 A
Rds On – Drain-Source Resistance:	70 mOhms
Vgs – Gate-Source Voltage:	– 8 V, + 22 V
Vgs th – Gate-Source Threshold Voltage:	4.3 V
Qg – Gate Charge:	74 nC
Minimaalne töötemperatuur:	- 55 C
Maksimaalne töötemperatuur:	+ 175 C
Pd - Võimsuse hajumine:	176 W
Channel Mode:	Enhancement
Kaubamärk:	EliteSiC
Seeria:	NVH4L060N065SC1
Pakend:	Tube
Brändi:	onsemi
Konfiguratsioon:	Single
Fall Time:	11 ns
Forward Transconductance – Min:	12 S
Toote tüüp: Toode:	MOSFET
Rise Time:	14 ns
Tehase pakendi kogus:	450
Alamkategooria:	MOSFETs
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns

Lisateave

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L060N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

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NVH4L060N065SC1

Lisateave

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

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