MRF6V12500HR5

Toote omadused

Tootja:	NXP
Pakend / ümbris:	NI-780H-2
Kanalite arv:	1 kanal
Toote tüüp: Toode:	RF MOSFET Transistors
Seeria:	MRF6V12500H

Kategooria: NXP

Tootja:	NXP
Tootekategooria:	RF MOSFET Transistors
Transistor Polarity:	N-Channel
Technology:	Si
Vds – Drain-Source Breakdown Voltage:	110 V
Operating Frequency:	960 MHz to 1.215 MHz
Kasum:	19.7 dB
Output Power:	500 W
Maksimaalne töötemperatuur:	+ 150 C
Paigaldamise stiil:	Flange Mount
Pakend / ümbris:	NI-780H-2
Pakend:	Reel
Pakend:	Lõigatud lint
Pakend:	MouseReel
Brändi:	NXP Semiconductors
Konfiguratsioon:	Single
Kanalite arv:	1 kanal
Toote tüüp: Toode:	RF MOSFET Transistors
Seeria:	MRF6V12500H
Tehase pakendi kogus:	50
Alamkategooria:	MOSFETs
Tüüp:	RF Power MOSFET
Vgs – Gate-Source Voltage:	+ 10 V
Vgs th – Gate-Source Threshold Voltage:	2.4 V
Osa # Aliase:	935310167178
Ühiku kaal:	0.226635 oz

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MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET

NXP’s MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 V_DD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.
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MRF6V12500HR5

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MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET

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