|
Tootja: |
Microchip |
| Tootekategooria: | Discrete Semiconductor Modules |
|
Toode: |
Power MOSFET Modules |
|
Technology: |
SiC |
|
Vgs – Gate-Source Voltage: |
– 10 V, + 23 V |
|
Paigaldamise stiil: |
Screw Mount |
|
Pakend / ümbris: |
TO-247-3 |
|
Minimaalne töötemperatuur: |
- 55 C |
|
Maksimaalne töötemperatuur: |
+ 175 C |
|
Pakend: |
Tube |
| Brändi: | Microchip Technology |
| Konfiguratsioon: | Single |
| Fall Time: | 18 ns |
| Id – Continuous Drain Current: | 113 A |
| Kanalite arv: | 1 kanal |
| Pd - Võimsuse hajumine: | 455 W |
| Toote tüüp: Toode: | Discrete Semiconductor Modules |
| Rds On – Drain-Source Resistance: | 22 mOhms |
| Rise Time: | 13 ns |
| Tehase pakendi kogus: | 30 |
| Alamkategooria: | Discrete Semiconductor Modules |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 51 ns |
| Typical Turn-On Delay Time: | 29 ns |
| Vds – Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th – Gate-Source Threshold Voltage: | 2.7 V |
MSC017SMA120B
Toote omadused
|
Tootja: |
Microchip |
|
Toode: |
Power MOSFET Modules |
|
Pakend / ümbris: |
TO-247-3 |
| Kanalite arv: | 1 kanal |
| Toote tüüp: Toode: | Discrete Semiconductor Modules |
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