NVMYS9D3N06CLTWG

Propiedades del producto

Fabricante:
 onsemi
Paquete / Estuche:
 LFPAK-4
Número de canales:
 1 Canal
Series:
 NVMYS9D3N06CL
Tipo de producto: MOSFET

 

Categoría:
Fabricante:
 onsemi
Categoría de productos: MOSFET
Technology:
 Si
Estilo de montaje:
 SMD/SMT
Paquete / Estuche:
 LFPAK-4
Transistor Polarity:
 N-Channel
Número de canales:
 1 Canal
Vds – Drain-Source Breakdown Voltage:
 60 V
Id – Continuous Drain Current:
 50 A
Rds On – Drain-Source Resistance:
 9.2 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2 V
Qg – Gate Charge:
 9.5 nC
Temperatura mínima de funcionamiento:
 – 55 C
Temperatura máxima de funcionamiento:
 + 175 C
Pd – Power Dissipation:
 46 W
Channel Mode:
 Enhancement
Series:
 NVMYS9D3N06CL
Embalaje:
 Carrete
Embalaje:
 Cinta de corte
Marca: onsemi
Configuration: Single
Fall Time: 2 ns
Forward Transconductance – Min: 37 S
Tipo de producto: MOSFET
Rise Time: 25 ns
Cantidad del paquete de fábrica: 3000
Subcategoría: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 6 ns

NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low RDS(ON) to minimize conduction losses and low gate charge (QG) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

PowerTrench® MOSFETs

onsemi / Fairchild PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

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