MSC080SMA120B

Propiedades del producto

Fabricante:
 Pastilla
Paquete / Estuche:
 TO-247-3
Número de canales:
 1 Canal
Tipo de producto: MOSFET

 

Categoría:
Fabricante:
 Pastilla
Categoría de productos: MOSFET
Technology:
 SiC
Estilo de montaje:
 Through Hole
Paquete / Estuche:
 TO-247-3
Transistor Polarity:
 N-Channel
Número de canales:
 1 Canal
Vds – Drain-Source Breakdown Voltage:
 1.2 kV
Id – Continuous Drain Current:
 37 A
Rds On – Drain-Source Resistance:
 100 mOhms
Vgs – Gate-Source Voltage:
 – 10 V, + 23 V
Vgs th – Gate-Source Threshold Voltage:
 1,8 voltios
Qg – Gate Charge:
 64 nC
Temperatura mínima de funcionamiento:
 – 55 C
Temperatura máxima de funcionamiento:
 + 175 C
Pd – Power Dissipation:
 200 W
Channel Mode:
 Enhancement
Embalaje:
 Tubo
Marca: Tecnología de microchips
Configuration: Single
Tipo de producto: MOSFET
Cantidad del paquete de fábrica: 30
Subcategoría: MOSFETs
Peso unitario: 0.211644 oz

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip’s next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, SiC MOSFET and SiC SBD die can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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