NVMYS9D3N06CLTWG

Produkt-Eigenschaften

Hersteller:
 onsemi
Verpackung / Etui:
 LFPAK-4
Anzahl von Kanälen:
 1 Kanal
Serie:
 NVMYS9D3N06CL
Produkttyp: MOSFET

 

Kategorie:
Hersteller:
 onsemi
Produktkategorie: MOSFET
Technology:
 Si
Montageart:
 SMD/SMT
Verpackung / Etui:
 LFPAK-4
Transistor Polarity:
 N-Channel
Anzahl von Kanälen:
 1 Kanal
Vds – Drain-Source Breakdown Voltage:
 60 V
Id – Continuous Drain Current:
 50 A
Rds On – Drain-Source Resistance:
 9.2 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2 V
Qg – Gate Charge:
 9.5 nC
Minimale Betriebstemperatur:
 – 55 C
Maximale Betriebstemperatur:
 + 175 C
Pd – Power Dissipation:
 46 W
Channel Mode:
 Enhancement
Serie:
 NVMYS9D3N06CL
Verpackung:
 Rolle
Verpackung:
 Band schneiden
Marke: onsemi
Configuration: Single
Fall Time: 2 ns
Forward Transconductance – Min: 37 S
Produkttyp: MOSFET
Rise Time: 25 ns
Fabrikpackung Menge: 3000
Unterkategorie: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 6 ns

NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low RDS(ON) to minimize conduction losses and low gate charge (QG) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

PowerTrench® MOSFETs

onsemi / Fairchild PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

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