STL260N4LF7

Produktets egenskaber

Producent:
 STMicroelectronics
Pakke/etui:
 PowerFLAT5x6-8
Antal kanaler:
 1 kanal
Produkttype: MOSFET

 

Kategori:
Producent:
 STMicroelectronics
Produktkategori: MOSFET
Technology:
 Si
Monteringsstil:
 SMD/SMT
Pakke/etui:
 PowerFLAT5x6-8
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 120 A
Rds On – Drain-Source Resistance:
 1.1 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2.5 V
Qg – Gate Charge:
 42 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 175 C
Pd – Power Dissipation:
 188 W
Channel Mode:
 Enhancement
Emballage:
 Spole
Emballage:
 Klip tape
Emballage:
 MouseReel
Brand: STMicroelectronics
Fall Time: 23 ns
Produkttype: MOSFET
Rise Time: 14 ns
Fabrikspakke Antal: 3000
Underkategori: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 74 ns
Typical Turn-On Delay Time: 21 ns
Enhedsvægt: 0.002681 oz

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

Anmeldelser

Der er ingen anmeldelser endnu.

Vær den første til at anmelde "STL260N4LF7"

Relaterede produkter

Vis

TSV792IST

Vis

LM219DT

Vis

TS522IDT

Vis

TSV7722IST

Vis

LM224PT

Vis

TDA7575B

Vis

TDA2822D

Vis

TS27L2CDT

da_DKDA
en_USEN arAR bg_BGBG cs_CZCS nl_NLNL etET fiFI fr_FRFR de_DEDE elEL hu_HUHU it_ITIT jaJA ko_KRKO nb_NONB pl_PLPL ru_RURU es_ARES sv_SESV tr_TRTR ukUK da_DKDA