SSM2212RZ-R7

Produktets egenskaber

Producent:
 Analog Devices Inc.
Pakke/etui:
 SOIC-8
Serie:
 SSM2212
Produkttype: BJTs – Bipolar Transistors

 

Kategori:
Producent:
 Analog Devices Inc.
Produktkategori: Bipolar Transistors – BJT
Monteringsstil:
 SMD/SMT
Pakke/etui:
 SOIC-8
Transistor Polarity:
 NPN
Configuration:
 Dual
Collector- Emitter Voltage VCEO Max:
 40 V
Collector- Base Voltage VCBO:
 40 V
Emitter- Base Voltage VEBO:
 –
Collector-Emitter Saturation Voltage:
 50 mV
Maximum DC Collector Current:
 20 mA
Pd – Power Dissipation:
 –
Gain Bandwidth Product fT:
 200 MHz
Minimum driftstemperatur:
 - 40 C
Maksimal driftstemperatur:
 + 85 C
Serie:
 SSM2212
Emballage:
 Spole
Emballage:
 Klip tape
Emballage:
 MouseReel
Brand: Analoge enheder
DC Collector/Base Gain hfe Min: 300 at 1 mA, 200 at 10 uA
Højde: 1,5 mm
Længde: 5 mm
Produkttype: BJTs – Bipolar Transistors
Fabrikspakke Antal: 1000
Underkategori: Transistorer
Technology: Si
Bredde: 4 mm
Enhedsvægt: 0,019048 oz

SSM2212 Dual-Matched NPN Transistor

Analog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb’ is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.

Linear ADI SLP

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