Producent: |
STMicroelectronics |
Produktkategori: | MOSFET |
Technology: |
GaN |
Monteringsstil: |
SMD/SMT |
Pakke/etui: |
PowerFLAT-8 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
1 kanal |
Vds – Drain-Source Breakdown Voltage: |
650 V |
Id – Continuous Drain Current: |
15 A |
Rds On – Drain-Source Resistance: |
120 mOhms |
Vgs – Gate-Source Voltage: |
– 10 V, + 6 V |
Vgs th – Gate-Source Threshold Voltage: |
2.6 V |
Qg – Gate Charge: |
3 nC |
Minimum driftstemperatur: |
– 55 C |
Maksimal driftstemperatur: |
+ 155 C |
Pd – Power Dissipation: |
192 W |
Channel Mode: |
Enhancement |
Emballage: |
Spole |
Emballage: |
Klip tape |
Emballage: |
MouseReel |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 9.7 ns |
Fugtfølsom: | Ja |
Produkttype: | MOSFET |
Rise Time: | 6 ns |
Fabrikspakke Antal: | 3000 |
Underkategori: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 8.9 ns |
Typical Turn-On Delay Time: | 4.1 ns |
Enhedsvægt: | 0.002681 oz |
SGT120R65AL
Produktets egenskaber
Producent: |
STMicroelectronics |
Pakke/etui: |
PowerFLAT-8 |
Antal kanaler: |
1 kanal |
Produkttype: | MOSFET |
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