NVMJST1D4N06CLTXG

Produktets egenskaber

Producent:
 onsemi
Pakke/etui:
 TCPAK57
Antal kanaler:
 1 kanal
Serie:
 NVMJST1D4N06CL
Produkttype: MOSFET

 

Kategori:
Producent:
 onsemi
Produktkategori: MOSFET
Monteringsstil:
 SMD/SMT
Pakke/etui:
 TCPAK57
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 60 V
Id – Continuous Drain Current:
 198 A
Rds On – Drain-Source Resistance:
 1.49 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 2 V
Qg – Gate Charge:
 92.2 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 175 C
Pd – Power Dissipation:
 113 W
Channel Mode:
 Enhancement
Serie:
 NVMJST1D4N06CL
Brand: onsemi
Configuration: Single
Fall Time: 11 ns
Forward Transconductance – Min: 217 S
Produkttype: MOSFET
Rise Time: 25 ns
Fabrikspakke Antal: 3000
Underkategori: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 16 ns

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low RDS(ON), low QG, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.

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