NVBLS0D5N04CTXG

Produktets egenskaber

Producent:
 onsemi
Pakke/etui:
 TO-LL8-8
Antal kanaler:
 1 kanal
Serie:
 NVBLS0D5N04C
Produkttype: MOSFET

 

Kategori:
Producent:
 onsemi
Produktkategori: MOSFET
REACH – SVHC:
Technology:
 Si
Monteringsstil:
 SMD/SMT
Pakke/etui:
 TO-LL8-8
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 40 V
Id – Continuous Drain Current:
 300 A
Rds On – Drain-Source Resistance:
 570 uOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 4 V
Qg – Gate Charge:
 185 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 175 C
Pd – Power Dissipation:
 198.4 W
Channel Mode:
 Enhancement
Serie:
 NVBLS0D5N04C
Emballage:
 Spole
Emballage:
 Klip tape
Emballage:
 MouseReel
Brand: onsemi
Produkttype: MOSFET
Fabrikspakke Antal: 2000
Underkategori: MOSFETs

Automotive Power MOSFETs

onsemi  Power MOSFETs feature low RDS(on) to minimize conduction losses and low Qg/capacitance to minimize driver losses. These power MOSFETs lower switching losses/Electro-Magnetic Interference (EMI). onsemi Automotive Power MOSFETs come in a TO-Leadless (TOLL) package for efficient designs with high thermal performance. These MOSFETs are AEC-Q101 qualified and PPAP capable for automotive applications. These devices are suitable for power tools, battery-operated vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, battery management systems (BMS)/storage, and home automation.

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