NTMFS4C324NT1G

Produktets egenskaber

Kategori: ONSEMI

Producent:	onsemi
Produktkategori:	MOSFET
Monteringsstil:	SMD/SMT
Pakke/etui:	SO-8
Transistor Polarity:	N-Channel
Antal kanaler:	1 kanal
Vds – Drain-Source Breakdown Voltage:	30 V
Id – Continuous Drain Current:	136 A
Rds On – Drain-Source Resistance:	1.7 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.2 V
Qg – Gate Charge:	20.8 nC
Minimum driftstemperatur:	– 55 C
Maksimal driftstemperatur:	+ 150 C
Pd – Power Dissipation:	64 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	SIngle
Fall Time:	17 ns
Forward Transconductance – Min:	136 S
Produkttype:	MOSFET
Rise Time:	32 ns
Fabrikspakke Antal:	1500
Underkategori:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	14 ns

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