NTMFS3D6N10MCLT1G

Produktets egenskaber

Producent:
 onsemi
Pakke/etui:
 SO-8FL-4
Antal kanaler:
 1 kanal
Serie:
 NTMFS3D6N10MCL
Produkttype: MOSFET

 

Kategori:
Producent:
 onsemi
Produktkategori: MOSFET
REACH – SVHC:
Technology:
 Si
Monteringsstil:
 SMD/SMT
Pakke/etui:
 SO-8FL-4
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 100 V
Id – Continuous Drain Current:
 131 A
Rds On – Drain-Source Resistance:
 3.6 mOhms
Vgs – Gate-Source Voltage:
 – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
 3 V
Qg – Gate Charge:
 60 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 150 C
Pd – Power Dissipation:
 136 W
Channel Mode:
 Enhancement
Serie:
 NTMFS3D6N10MCL
Emballage:
 Spole
Emballage:
 Klip tape
Emballage:
 MouseReel
Brand: onsemi
Produkttype: MOSFET
Fabrikspakke Antal: 1500
Underkategori: MOSFETs

NTMFS3D6N10MCL Single N-Channel Power MOSFET

onsemi NTMFS3D6N10MCL Single N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This MOSFET comes with low drain-to-source resistance (RDS(on)) to minimize conduction losses and low capacitance to minimize driver losses. onsemi NTMFS3D6N10MCL MOSFET is available in a small footprint flat lead package with 5mm x 6mm dimensions. Typical applications include primary DC-DC MOSFETs, synchronous rectifiers in DC-DC and AC-DC, motor drives, and switching power supplies.

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