NTHL019N65S3H

Produktets egenskaber

Producent:
 onsemi
Pakke/etui:
 TO-247-3
Antal kanaler:
 1 kanal
Serie:
 NTHL019N65S3H
Produkttype: MOSFET

 

Kategori:
Producent:
 onsemi
Produktkategori: MOSFET
REACH – SVHC:
Technology:
 Si
Monteringsstil:
 Gennem hul
Pakke/etui:
 TO-247-3
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 650 V
Id – Continuous Drain Current:
 75 A
Rds On – Drain-Source Resistance:
 19.3 mOhms
Vgs – Gate-Source Voltage:
 – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage:
 4 V
Qg – Gate Charge:
 282 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 150 C
Pd – Power Dissipation:
 625 W
Channel Mode:
 Enhancement
Serie:
 NTHL019N65S3H
Emballage:
 Rør
Brand: onsemi
Produkttype: MOSFET
Fabrikspakke Antal: 450
Underkategori: MOSFETs

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

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