|
Producent: |
onsemi |
| Produktkategori: | MOSFET |
|
Technology: |
SiC |
|
Monteringsstil: |
SMD/SMT |
|
Pakke/etui: |
TO-247-4 |
|
Transistor Polarity: |
N-Channel |
|
Antal kanaler: |
1 kanal |
|
Vds – Drain-Source Breakdown Voltage: |
1.2 kV |
|
Id – Continuous Drain Current: |
151 A |
|
Rds On – Drain-Source Resistance: |
20 mOhms |
|
Vgs – Gate-Source Voltage: |
– 10 V, + 22 V |
|
Vgs th – Gate-Source Threshold Voltage: |
4.4 V |
|
Qg – Gate Charge: |
254 nC |
|
Minimum driftstemperatur: |
– 55 C |
|
Maksimal driftstemperatur: |
+ 175 C |
|
Pd – Power Dissipation: |
682 W |
|
Channel Mode: |
Enhancement |
|
Handelsnavn: |
EliteSiC |
|
Serie: |
NTH4L013N120M3S |
| Brand: | onsemi |
| Configuration: | SIngle |
| Fall Time: | 10 ns |
| Forward Transconductance – Min: | 57 S |
| Produkttype: | MOSFET |
| Rise Time: | 23 ns |
| Fabrikspakke Antal: | 450 |
| Underkategori: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 56 ns |
| Typical Turn-On Delay Time: | 22 ns |
NTH4L013N120M3S
Produktets egenskaber
|
Producent: |
onsemi |
|
Pakke/etui: |
TO-247-4 |
|
Antal kanaler: |
1 kanal |
|
Serie: |
NTH4L013N120M3S |
| Produkttype: | MOSFET |
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Anmeldelser
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