|
Producent: |
Microchip |
| Produktkategori: | Discrete Semiconductor Modules |
|
Produkt: |
Power MOSFET Modules |
|
Technology: |
SiC |
|
Vgs – Gate-Source Voltage: |
– 10 V, + 23 V |
|
Monteringsstil: |
Screw Mount |
|
Pakke/etui: |
TO-247-3 |
|
Minimum driftstemperatur: |
– 55 C |
|
Maksimal driftstemperatur: |
+ 175 C |
|
Emballage: |
Rør |
| Brand: | Microchip Technology |
| Configuration: | Single |
| Fall Time: | 18 ns |
| Id – Continuous Drain Current: | 113 A |
| Antal kanaler: | 1 kanal |
| Pd – Power Dissipation: | 455 W |
| Produkttype: | Discrete Semiconductor Modules |
| Rds On – Drain-Source Resistance: | 22 mOhms |
| Rise Time: | 13 ns |
| Fabrikspakke Antal: | 30 |
| Underkategori: | Discrete Semiconductor Modules |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 51 ns |
| Typical Turn-On Delay Time: | 29 ns |
| Vds – Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th – Gate-Source Threshold Voltage: | 2.7 V |
MSC017SMA120B
Produktets egenskaber
|
Producent: |
Microchip |
|
Produkt: |
Power MOSFET Modules |
|
Pakke/etui: |
TO-247-3 |
| Antal kanaler: | 1 kanal |
| Produkttype: | Discrete Semiconductor Modules |
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