MRF6V12500HR5

Produktets egenskaber

Producent:
 NXP
Pakke/etui:
 NI-780H-2
Antal kanaler: 1 kanal
Produkttype: RF MOSFET Transistors
Serie: MRF6V12500H

 

Kategori:
Producent:
 NXP
Produktkategori: RF MOSFET Transistors
Transistor Polarity:
 N-Channel
Technology:
 Si
Vds – Drain-Source Breakdown Voltage:
 110 V
Operating Frequency:
 960 MHz to 1.215 MHz
Gain:
 19.7 dB
Output Power:
 500 W
Maksimal driftstemperatur:
 + 150 C
Monteringsstil:
 Flange Mount
Pakke/etui:
 NI-780H-2
Emballage:
 Spole
Emballage:
 Klip tape
Emballage:
 MouseReel
Brand: NXP Semiconductors
Configuration: Single
Antal kanaler: 1 kanal
Produkttype: RF MOSFET Transistors
Serie: MRF6V12500H
Fabrikspakke Antal: 50
Underkategori: MOSFETs
Type: RF Power MOSFET
Vgs – Gate-Source Voltage: + 10 V
Vgs th – Gate-Source Threshold Voltage: 2.4 V
Del # Aliasser: 935310167178
Enhedsvægt: 0.226635 oz

MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET

NXP’s MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 VDD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.
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