|
Producent: |
NXP |
| Produktkategori: | RF MOSFET Transistors |
| REACH – SVHC: | |
|
Transistor Polarity: |
N-Channel |
|
Technology: |
Si |
|
Vds – Drain-Source Breakdown Voltage: |
100 V |
|
Operating Frequency: |
960 MHz to 1.4 GHz |
|
Gain: |
25 dB |
|
Output Power: |
10 W |
|
Minimum driftstemperatur: |
– 65 C |
|
Maksimal driftstemperatur: |
+ 150 C |
|
Monteringsstil: |
Flange Mount |
|
Pakke/etui: |
PLD-1.5 |
|
Emballage: |
Spole |
|
Emballage: |
Klip tape |
|
Emballage: |
MouseReel |
| Brand: | NXP Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single Dual Source |
| Højde: | 1.83 mm |
| Længde: | 6.73 mm |
| Fugtfølsom: | Ja |
| Produkttype: | RF MOSFET Transistors |
| Serie: | MRF6V10010N |
| Fabrikspakke Antal: | 100 |
| Underkategori: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs – Gate-Source Voltage: | + 10 V |
| Vgs th – Gate-Source Threshold Voltage: | 1.7 V |
| Bredde: | 5.97 mm |
| Del # Aliasser: | 935321297531 |
| Enhedsvægt: | 0.009877 oz |
MRF6V10010NR4
Produktets egenskaber
|
Producent: |
NXP |
|
Pakke/etui: |
PLD-1.5 |
| Produkttype: | RF MOSFET Transistors |
| Serie: | MRF6V10010N |
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